Fabrication and electrical, electrochemical characteristics of copper chloride-doped graphene films

In this study, the thin films of graphene (Gr) doped with copper (I) chloride (CuCl) were fabricated on a (Cu) substrate by chemical vapour deposition method at 1000oC in mixture gases (Ar, H2, and CH4) combined annealing 220oC to vapourise CuCl powder. The morphology, structure, electrical, electrochemical characteristics CuCl-doped Gr (CuCl-Gr) investigated via field emission scanning electron microscopy (FESEM), Raman spectroscopy, four-probe cyclic voltammetry. results spectroscopy showed that there is shift characteristic peaks (D, G 2D) toward higher frequencies CuCl-Gr film compared pristine film. surface resistance measurement exhibited has about 452 ohm/square (Ω/□), 2.02 times lower than (913 Ω/□). 3 mM Fe(CN)63-/4- 0.1 M PBS proved peak response current gold electrode (AuE) coated 21.2 μA, 1.6 AuE Gr. These research great potential using cover working electrodes increasing conductivity sensitivity sensors.